产品特性
高速响应、高增益、低结电容、低噪声
正照平面型芯片结构
200μm、500μm 光敏面可选
COB 封装
产品应用
激光测距、激光告警、激光雷达等应用
技术参数
| 规格项 | 参数值 |
|---|---|
| Dark Current | 0.02 to 0.4 nA |
| Responsibility | 35 to 50 A/W |
| Operating Temperature | -20 to 85 C |
| Response Time | 0.3 ns |
| Forward current | 1 mA |
| Spectral width | 400 to 1100 nm |
| Optimum Magnification Times | 100 |
| Capacitance | 1.5pF |
| Dissipation Power | 1 mW |
| Soldering Temperature | 260 C |
| Diameter Of Photosensitive Surface | 200;500 um |
| Reverse Breakdown Voltage | 80 to 200 V |
| Operating Voltage | 0.9 V |
| Storage Temperature Range | -55 to 125 C |
| Working voltage temperature Coefficient | 0.6 V |
