产品特性
高速响应、高增益、低结电容、低噪声
正照平面型芯片结构
200μm、500μm 光敏面可选
陶瓷贴片封装
内置滤波片(635nm 窄带)和白玻窗可选
产品应用
激光测距、激光告警、激光雷达等应用
技术参数
规格项 | 参数值 |
---|---|
Responsibility | 35 to 50 A/W |
Storage Temperature Range | -55 to 125 C |
Capacitance | 1.5pF |
Working Voltage Temperature Coefficient | 0.6V |
Soldering Temperature | 260 C |
Forward current | 1 mA |
Dark Current | 0.02 to 0.4 nA |
Reverse Breakdown Voltage | 80 to 200 V |
Operating Temperature | -20 to 85 C |
Diameter Of Photosensitive Surface | 200;500 um |
Operating Voltage | 0.9 V |
Dissipation Power | 1 mW |
Optimum Magnification Times | 100 |
Spectral width | 400 to1100 nm |
Response Time | 0.3 ns |