产品特性
高速响应、高增益、低结电容、低噪声
正照平面型芯片结构
500μm、200μm 光敏面
产品应用
脉冲激光测距、激光告警、激光雷达等应用
技术参数
| 规格项 | 参数值 |
|---|---|
| Diameter Of Photosensitive Surface | 500 um |
| Dissipation Power | 1 mW |
| Forward current | 1 mA |
| Dark Current | 0.2 to 1.0 nA |
| Operating Temperature | -20 to 80 C |
| Reverse Breakdown Voltage | 350 V |
| Optimum Magnification Times | 30 |
| Responsibility | 13 A/W |
| Storage Temperature Range | -40 to 100 C |
| Spectral width | 400 to 1100 nm |
| Operating Voltage | 150 to 200 V |
| Soldering Temperature | 260 C |
| Response Time | 2 ns |
| Capacitance | 1 pF |
